(a) Plot a Bridge full-wave rectifier and (b) explain the operation principle of it. Also, (c) please describe how to drive the PIV (peak inverse voltage) of the diodes used. (7%, 7%, 6%)

(a) What is its full-power bandwidthfM?

(b) If an input sinusoidal signal with frequency f = 5fM is applied to a unity-gain follower configuration as shown in Fig. 1, what is the maximum possible amplitude that can be accommodated at the output without incurring SR distortion? (5%*2) 

2.(10%) Consider a circuit of Fig. 2 with a BJT device having β = 100 when it is biased in the active region. The constant voltage drop 0.7 V approximation can be used for the turn-on of a p-n junction, and the constant voltage drop ~ 0.2 V approximation can be used when the BJT is biased in the saturation region. Please calculate the collector current Ic and base current IB. (5%*2) 

3. (15%) Consider the voltage amplifier of Fig. 3(a) with Voo = 2 V, Rp = 20 kQ, and with a MOSFET specified to have Vt = 0.5 V,(W/L) = 5 mA/V2, and λ = 0 . Calculate the of the voltage transfer characteristic as shown in Fig. 3(b). (5%*3)

4. (15%) Consider the yoltage amplifier of Fig. 4 with a MOSFET specified to have Vt=  1.5 V, (WIL) = 0.5 mArV2, andλ = 0.02. The coupling capacitors C can block DC component and pass AC component. Calculate (a) the small-signal voltage gain (b) its input resistance , and (O) the largest allowable input signal. (5%*3)

5. (25%) Consider the voltage amplifier of Fig. 5 with two BJT devices: Q1 and Q2, having β= 100 when they are biased in the active region. The coupling capacitors C can block DC component and pass AC component. The voltage supplies are 10 V and the thermal voltage VT = 25.9 mV. The constant voltage drop 0.7 V approximation can be used for the turn-on of a p-n junction. In addition, other resistances are also included in the Fig. 5. Please come out the following parameters: (a) DC base voltage of Q1:, (b) DC base voltage of Q2: , (c) DC collector voltage of Q2: . (d) overall AC voltage gain. (5%, 5%, 5%, 10%) 

6. (25%) Consider the voltage amplifier of Fig. 6 with a BJT device having β = 100 when it is biased in the active region. The coupling capacitors C1 = C2 = C3 = 1 μF. The voltage supplies are 5 V and the thermal voltage VT= 25.9 mV. If the transistor is specified to have fT = 700 MHz and Cμ = 1 pi. The constant voltage drop 0.7 V approximation can be used for the turn-on of a p-n junction. In addition. other resistances are also included in the Fig. 6. Please calculate (a)f1，f2，f3 (let f1 ＜f2＜f3) values of the low-frequcncy transfer function (b) the upper 3-dB frequcncy fHby using open-circuit time constants method if the ro and rx effect are neglected. (5%*3, 10%) 

 (a)(10%) Estimate the quality factor of the equivalent smnall-signal LCR circuit seen at the collectorof Q.

 (b) (10%) If the sustained oscillation occurs, what will be the oscillation frequency (in Hz)?

 (c)(10%) Calculate the small-signal transconductance gm of the transistor Q, and determine if thefeedback gain is large enough to cause oscillation. Justify your answer.

110年 - 110 國立中山大學_碩士班招生考試_電機系(甲組)：電子學(甲組)#106054

110年 - 110 國立中山大學_碩士班招生考試_電機系(戊組)、通訊所(乙組)、電波聯合：電子學#104281

109年 - 109 國立中山大學_碩士班招生考試_電機系(甲組)：電子學(甲組)#106048

107年 - 107 國立中山大學_碩士班招生考試_電機系(甲組)：電子學#110217

107年 - 107 國立中山大學_碩士班招生考試_電波領域：電子學#108992

106年 - 106 國立中山大學_碩士班招生考試_電波領域：電子學#110216

106年 - 106 國立中山大學_碩士班招生考試_電機系(甲組)：電子學#108988

105年 - 105 國立中山大學_碩士班招生考試_電機系(甲組)(己組)：電子學#110214

104年 - 104 國立中山大學_碩士班招生考試_電機系(甲組、乙組、戊組)、電波領域：電子學#110220

103年 - 103 國立中山大學_碩士班招生考試_電機系(甲、乙、戊組)、電波領域：電子學#110218