5. Select a value for “RE” in Fig. 5 so that the transistor saturateswith a forced β of 30. Assume VEB = 0.7 V and VEC,sat = 0.2 V. (12%)

3.For the voltage divider with I = 90 μA, shown in Fig. 3, e MOSFET has VT = 1V, μnCox = 20 μA/V2, and neglect the effectof ro. Design the W/L ratio of each Q1, Q2, and Q3 MOSFETs suchthat the source voltage V1 of the transistor Q1 is +1 V and sourcevoltage V2 of the transistor Q2 is -1 V. (18%, Each sub-questiontakes 6 %)